| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-993 - C4-996 | |
| DOI | https://doi.org/10.1051/jphyscol:19814216 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-993-C4-996
DOI: 10.1051/jphyscol:19814216
Institute of Nuclear Physics, Moscow State University, Moscow 117234, USSR
J. Phys. Colloques 42 (1981) C4-993-C4-996
DOI: 10.1051/jphyscol:19814216
VANADATE SEMICONDUCTING GLASSES DOPED WITH OXIDES OF OTHER TRANSITION METALS
L.D. Bogomolova, V.A. Jachkin, M.P. Glassova and S.N. SpasibkinaInstitute of Nuclear Physics, Moscow State University, Moscow 117234, USSR
Abstract
The EPR spectra, electrical conductivity and activation energy have been measured in barium-vanadate glasses doped with CuO, Mn2O3, Fe2O3, Co2O3 and Cr2O3 impurities in concentration from 0.1 to 7 wt.%. The results are interpreted in terms of distinct interactions between vanadium and impurity ions.