| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-981 - C4-992 | |
| DOI | https://doi.org/10.1051/jphyscol:19814215 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-981-C4-992
DOI: 10.1051/jphyscol:19814215
Spectrochimie du Solide (LA 302), T.44 - Université Pierre et Marie Curie, 4, place Jussieu, 75230 Paris, France
J. Phys. Colloques 42 (1981) C4-981-C4-992
DOI: 10.1051/jphyscol:19814215
AMORPHOUS TRANSITION METAL OXIDES
J. LivageSpectrochimie du Solide (LA 302), T.44 - Université Pierre et Marie Curie, 4, place Jussieu, 75230 Paris, France
Abstract
The semiconducting properties of Transition Metal Oxide (T.M.O.) glasses have been known for almost 30 years, since the pioneering work of Denton et al in 1954 (1). They have been extensively studied and recently reviewed by Mackenzie et al (2) (3). Their specific properties arise from the fact that transition metal ions may exhibit several valence states (V4+-V5+, W5+-W6+) so that electron transfer from low to high valence states can take place. This electron transfer can be either optically or thermally activated and T.M.O. glasses will exhibit both optical and electrical properties.