| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-947 - C4-950 | |
| DOI | https://doi.org/10.1051/jphyscol:19814207 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-947-C4-950
DOI: 10.1051/jphyscol:19814207
Laboratoire d'Etudes des Couches Minces Amorphes et Polycristallines, Faculté des Sciences de Rouen, 76130 Mont-Saint-Aignan, France
J. Phys. Colloques 42 (1981) C4-947-C4-950
DOI: 10.1051/jphyscol:19814207
CRYSTALLIZATION OF AMORPHOUS Se FILMS
G. Fleury, C. Viger, C. Vautier and C. LhermitteLaboratoire d'Etudes des Couches Minces Amorphes et Polycristallines, Faculté des Sciences de Rouen, 76130 Mont-Saint-Aignan, France
Abstract
Crystallization in amorphous Se films produced by flash evaporation technic has been studied from conductivity measurements on the temperature range 313 to 353K. The experimental results show an heterogenous nucleation and that the crystallization depends upon thickness ; they allow us to determine the parameters which characterise this phonomenon : growth and nucleation rates, concentration and mean size of the crystallites in good agreement with microscopy studies, as well as the growth rate activation energy.