| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-103 - C4-106 | |
| DOI | https://doi.org/10.1051/jphyscol:1981418 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-103-C4-106
DOI: 10.1051/jphyscol:1981418
1 IGV, Kernforschungsanlage Jülich, D-517 Jülich, F.R.G.
2 Fachbereich Physik, Univ. Marburg, D-355 Marburg, F.R.G.
3 Fachbereich Physik, Univ. Paderborn, D-4790 Paderborn, F.R.G.
J. Phys. Colloques 42 (1981) C4-103-C4-106
DOI: 10.1051/jphyscol:1981418
TRANSPORT PROPERTIES OF COMPENSATED a-Si FILMS
W. Beyer1, H. Mell2 and H. Overhof31 IGV, Kernforschungsanlage Jülich, D-517 Jülich, F.R.G.
2 Fachbereich Physik, Univ. Marburg, D-355 Marburg, F.R.G.
3 Fachbereich Physik, Univ. Paderborn, D-4790 Paderborn, F.R.G.
Abstract
The temperature dependence of conductivity and thermopower has been measured for a series of compensated a-Si:H films prepared by glow-discharge decomposition of SiH4-PH3-B2H6 mixtures. The discussion of the data in terms of current transport models points to extended states conduction with weak fluctuations of the mobility edges due to inhomogeneities. For boron doping levels [B2H6] ≥ 100 ppm a perceptible contribution of hopping conduction near EF is likely to be present. The electronic transport gap is found to be ≥ 1.74 eV, and the conductivity prefactors σo for electrons and holes are inferred to be equal within a factor of two.