Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-95 - C4-98
DOI https://doi.org/10.1051/jphyscol:1981416
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-95-C4-98

DOI: 10.1051/jphyscol:1981416

MODELLING OF THE BEHAVIOUR OF HOPPING CONDUCTIVITY IN A SOLID EXHIBITING A SEMICONDUCTOR-INSULATOR TRANSITION, AS A FUNCTION OF FREQUENCY

J.C. Giuntini1, 2, J.L. Jacquemin1, 3, J.V. Zanchetta1, 2 and G. Bordure1, 3

1  Université des Sciences et Techniques du Languedoc, Place E. Bataillon, 34060 Montpellier Cedex, France
2  Laboratoire de Chimie Physique
3  Centre d'Etudes d'Electronique des Solides


Abstract
We propose a model which explains the evolution of the frequency dependent conductivity while an organized structure appears in an initially amorphous system. We assume that the cristalline organization is connected with the existence of an anisotropy. An anisotropy parameter is calculated. An "a priori" calculation of the conductivity is developped, which correctly accounts for the experimental results obtained on "low temperature" carbons.