| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-567 - C4-570 | |
| DOI | https://doi.org/10.1051/jphyscol:19814123 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-567-C4-570
DOI: 10.1051/jphyscol:19814123
Fachbereich Physik, Universität Marburg, F.R.G.
J. Phys. Colloques 42 (1981) C4-567-C4-570
DOI: 10.1051/jphyscol:19814123
PRIMARY AND SECONDARY PHOTOCURRENTS IN n-TYPE AND p-TYPE a-Si:H FILMS
H.M. Welsch, W. Fuhs, K.H. Greeb and H. MellFachbereich Physik, Universität Marburg, F.R.G.
Abstract
The spectral dependence of the primary (reverse) and secondary (forward) photocurrents, Jr and Jf, in Schottky barrier diodes made from glow discharge deposited a-Si : H is studied in the energy range 0.8 - 3.1 eV using a two beam experimental set-up. Below 1.5 eV significant differences are observed between the spectra of Jf and Jr and also between diodes made from n-type and p-type material. They are interpreted as arising from differences between the generation rates of mobile electrons and mobile holes caused by the asymmetry of the density of gap states.