J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-507 - C4-510|
J. Phys. Colloques 42 (1981) C4-507-C4-510
DRIFT TYPE PHOTOVOLTAIC EFFECT IN a-Si p-i-n JUNCTIONH. Okamoto, T. Yamaguchi, S. Nonomura and Y. Hamakawa
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka, Japan
Photovoltaic property and related processes in an a-Si : H p-i-n junction have been examined by taking account the internal electric field distribution. Through the theoretical considerations combined with experimental data on the collection efficiency spectra, quantum efficiency and effective hole diffusion length have been evaluated to be at least 0.85 for ω >2.1eV and 1000A, respectively. An analysis has been also made on the photovoltaic performance of an inverted p-i-n junction cell, and which confirms an efficient photovoltaic operation not so much different from a p-i-n junction.