| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-487 - C4-490 | |
| DOI | https://doi.org/10.1051/jphyscol:19814103 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-487-C4-490
DOI: 10.1051/jphyscol:19814103
1 Laboratoire de Physique des Composants à Semiconducteurs, ERA CNRS 659, ENSER, 23 rue des Martyrs, 38031 Grenoble, France
2 Grupo de Energia Instituto de Fisica, Universidade Estadual de Campinas, Campinas, Brazil
3 Laboratoire de Physique des Composants a Semiconducteurs ERA CNRS 659
J. Phys. Colloques 42 (1981) C4-487-C4-490
DOI: 10.1051/jphyscol:19814103
ELECTRON TRANSPORT IN HYDROGENATED AMORPHOUS SILICON SCHOTTKY BARRIERS AND DEEP LOCALIZED STATES KINETICS
S. Deleonibus1 and D. Jousse2, 31 Laboratoire de Physique des Composants à Semiconducteurs, ERA CNRS 659, ENSER, 23 rue des Martyrs, 38031 Grenoble, France
2 Grupo de Energia Instituto de Fisica, Universidade Estadual de Campinas, Campinas, Brazil
3 Laboratoire de Physique des Composants a Semiconducteurs ERA CNRS 659
Abstract
We present a method for analysing transport in Schottky diodes on hydrogenated amorphous silicon (aSiH). Experimental results show a correlation between the reduction of carrier collection velocity, the reduction of barrier height for reduced space-charge regions. In the same way, the kinetics of "midgap" localized states is slowered as bulk states located near the Pt-aSiH contact contribute to capacitance.