Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-487 - C4-490
DOI https://doi.org/10.1051/jphyscol:19814103
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-487-C4-490

DOI: 10.1051/jphyscol:19814103

ELECTRON TRANSPORT IN HYDROGENATED AMORPHOUS SILICON SCHOTTKY BARRIERS AND DEEP LOCALIZED STATES KINETICS

S. Deleonibus1 and D. Jousse2, 3

1  Laboratoire de Physique des Composants à Semiconducteurs, ERA CNRS 659, ENSER, 23 rue des Martyrs, 38031 Grenoble, France
2  Grupo de Energia Instituto de Fisica, Universidade Estadual de Campinas, Campinas, Brazil
3  Laboratoire de Physique des Composants a Semiconducteurs ERA CNRS 659


Abstract
We present a method for analysing transport in Schottky diodes on hydrogenated amorphous silicon (aSiH). Experimental results show a correlation between the reduction of carrier collection velocity, the reduction of barrier height for reduced space-charge regions. In the same way, the kinetics of "midgap" localized states is slowered as bulk states located near the Pt-aSiH contact contribute to capacitance.