SOME PROBLEMS OF THE THEORY OF ELECTRON ENERGY SPECTRUM OF A DISORDERED SEMICONDUCTOR

V.L. Bonch-Bruevich; A.G. Mironov

doi:doi:10.1051/jphyscol:1981404

Numéro		J. Phys. Colloques Volume 42, Numéro C4, Octobre 1981 Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors


Page(s)		C4-33 - C4-36
DOI		https://doi.org/10.1051/jphyscol:1981404

Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-33-C4-36
DOI: 10.1051/jphyscol:1981404

SOME PROBLEMS OF THE THEORY OF ELECTRON ENERGY SPECTRUM OF A DISORDERED SEMICONDUCTOR

V.L. Bonch-Bruevich and A.G. Mironov

Faculty of Physics. Moscow University, Moscow, 117234, U.S.S.R.

Abstract
The paper consists of two parts. In the first one we consider the localisation problem at d=2. Assertion of all states to be localised is shown to depend upon some dynamic properties of the system - contrary to the d=1 and d=3 cases where just the geometrical considerations are known to be sufficient. The second part contains an attempt to understand what is in fact measured when one studies light absorption by the spatially inhomogeneous films (of the a Si:H type).