Numéro |
J. Phys. Colloques
Volume 41, Numéro C8, Août 1980
Fourth International Conference on Liquid and Amorphous Metals
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Page(s) | C8-89 - C8-90 | |
DOI | https://doi.org/10.1051/jphyscol:1980824 |
Fourth International Conference on Liquid and Amorphous Metals
J. Phys. Colloques 41 (1980) C8-89-C8-90
DOI: 10.1051/jphyscol:1980824
Kurchatov Institute of Atomic Energy, Moscow, USSR.
J. Phys. Colloques 41 (1980) C8-89-C8-90
DOI: 10.1051/jphyscol:1980824
CONDUCTIVITY OF SELENIUM IN SEMICONDUCTOR-METAL TRANSITION REGION AT HIGH TEMPERATURES AND PRESSURES
V.A. Alekseev, V.G. Ovcharenko et Yu. F. RyzhkovKurchatov Institute of Atomic Energy, Moscow, USSR.
Abstract
Electrical conductivity of Selenum has been measured in semiconductor metal transition region at pressures up to 0.4 GPa and temperatures up to 2100 K. It was observed that the origin of semiconductor-metal transition shifted to lower temperatures and metallic conductivity region was expanded. With pressure increasing the metallic conductivity level gradually increases from 102 Ω-1 cm-1 at 0.1 GPa to 103 Ω-lcm-1 at 0.4 GPa. On the other hand the metal-isolator transition shifts apparently to higher temperatures with pressure increasing. These data are compared with results on metal-nonmetal transition in arsenic and mercury. The character of semiconductor-metal and metal-isolator transitions is discussed.