J. Phys. Colloques
Volume 41, Numéro C8, Août 1980
Fourth International Conference on Liquid and Amorphous Metals
Page(s) C8-859 - C8-861
Fourth International Conference on Liquid and Amorphous Metals

J. Phys. Colloques 41 (1980) C8-859-C8-861

DOI: 10.1051/jphyscol:19808212


H. Bernas1, A. Traverse1, F.C. Zawislak1, J. Chaumont2 et L. Dumoulin3

1  Institut de Physique Nucléaire, B.P. N°1, 91400 Orsay, France
2  Laboratoire René Bernas, 91400 Orsay, France
3  Laboratoire de Physique des Solides, 91400 Orsay, France

Ion implantation simultaneously produces compositional changes and radiation damage in the target. If the latter is not annealed, amorphization should ultimately result. Can implantation of a covalent solute into a transition metal host stabilize the damage and hence produce an amorphous alloy at lower concentrations than other techniques ? We have studied the composition-dependence of the resistivity and TCR of thin (600-800 Å) Pd films implanted at 6 K with Si ions : The results are compared to those obtained on the corresponding well-documented quench-condensed alloys, which are amorphous at Si concentrations ~.18. The resistivity of the implanted films saturates at about 90 µΩ·cm for Si concentrations above ~.18. Thus, the critical concentration for amorphization is presumably the same for the low-temperature implanted or quench-condensed Pd-Si alloy, confirming that local structure effects dominate amorphous alloy formation criteria. In a further experiment, hydrogen was implanted into the amorphous Pd-Si films (again at 6K). The resistivity increased sharply, doubling at H concentrations around 100 %. The resulting systems were superconducting ; their maximum critical temperature was 2.6 K.