AMORPHOUS PD-SI ALLOYS AND HYDRIDES PREPARED BY LOW-TEMPERATURE ION-IMPLANTATION

Abstract
Ion implantation simultaneously produces compositional changes and radiation damage in the target. If the latter is not annealed, amorphization should ultimately result. Can implantation of a covalent solute into a transition metal host stabilize the damage and hence produce an amorphous alloy at lower concentrations than other techniques ? We have studied the composition-dependence of the resistivity and TCR of thin (600-800 Å) Pd films implanted at 6 K with Si ions : The results are compared to those obtained on the corresponding well-documented quench-condensed alloys, which are amorphous at Si concentrations ~.18. The resistivity of the implanted films saturates at about 90 µΩ·cm for Si concentrations above ~.18. Thus, the critical concentration for amorphization is presumably the same for the low-temperature implanted or quench-condensed Pd-Si alloy, confirming that local structure effects dominate amorphous alloy formation criteria. In a further experiment, hydrogen was implanted into the amorphous Pd-Si films (again at 6K). The resistivity increased sharply, doubling at H concentrations around 100 %. The resulting systems were superconducting ; their maximum critical temperature was 2.6 K.