| Numéro |
J. Phys. Colloques
Volume 41, Numéro C8, Août 1980
Fourth International Conference on Liquid and Amorphous Metals
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|---|---|---|
| Page(s) | C8-493 - C8-496 | |
| DOI | https://doi.org/10.1051/jphyscol:19808123 | |
Fourth International Conference on Liquid and Amorphous Metals
J. Phys. Colloques 41 (1980) C8-493-C8-496
DOI: 10.1051/jphyscol:19808123
Physico-Technical Institute of Low Temperatures, UkrSSR Academy of Sciences, 47, Lenin Prospekt, Kharkov, 310164, USSR.
J. Phys. Colloques 41 (1980) C8-493-C8-496
DOI: 10.1051/jphyscol:19808123
TEMPERATURE DEPENDENCE OF THE ELECTRIC RESISTIVITY OF AMORPHOUS BISMUTH FILMS
Yu.F. Komnik et B.I. BelevtsevPhysico-Technical Institute of Low Temperatures, UkrSSR Academy of Sciences, 47, Lenin Prospekt, Kharkov, 310164, USSR.
Abstract
The reversible temperature-induced variation of the electric resistivity is studied on amorphous bismuth films condensed onto helium temperature substrates in the region of existence of the amorphous phase. The films studied (10 to 130 Å thick) had negative temperature resistance coefficient. In the range 10-30 K the resistance difference (in reference to the initial value) is proportional to T4 ; however, superconducting fluctuations allowed for, it becomes proportional to T2. For thin films (< 30 Å) it varies as T2 in both the cases ; at temperature above 30 K it is proportional to T. The results obtained are discussed in terms of up-to-date theoretical models.