| Numéro |
J. Phys. Colloques
Volume 41, Numéro C8, Août 1980
Fourth International Conference on Liquid and Amorphous Metals
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|---|---|---|
| Page(s) | C8-28 - C8-31 | |
| DOI | https://doi.org/10.1051/jphyscol:1980807 | |
Fourth International Conference on Liquid and Amorphous Metals
J. Phys. Colloques 41 (1980) C8-28-C8-31
DOI: 10.1051/jphyscol:1980807
1 Department of Physics, Faculty of Science, Kyoto University, Kyoto 606, Japan.
2 College of General Education, University of Tokyo, Tokyo 153, Japan.
3 Faculty of Education, Hirosaki University, Hirosaki 036, Japan.
J. Phys. Colloques 41 (1980) C8-28-C8-31
DOI: 10.1051/jphyscol:1980807
PRESSURE-INDUCED SEMICONDUCTOR-TO-METAL TRANSITION IN LIQUID Te-Se MIXTURES
M. Yao1, K. Suzuki2, H. Hoshino3 et H. Endo11 Department of Physics, Faculty of Science, Kyoto University, Kyoto 606, Japan.
2 College of General Education, University of Tokyo, Tokyo 153, Japan.
3 Faculty of Education, Hirosaki University, Hirosaki 036, Japan.
Abstract
The electrical conductivity σ, the thermoelectric power S and the sound velocity C have been measured for liquid Te-Se mixtures in a wide temperature and pressure range. Substantial changes in σ and S from semiconducting to metallic values are induced by a slight application of pressure. The region where such changes occur is determined on the concentration-temperature plane and in that region the prominent maxima in the temperature variations of compressibility appear. It is suggested that the observed semiconductor-to-metal transition is originated from the structural change.