Numéro |
J. Phys. Colloques
Volume 34, Numéro C6, Novembre 1973
CONGRÈS DU CENTENAIRE DE LA SOCIÉTÉ FRANÇAISE DE PHYSIQUEPROPRIÉTÉS PHOTOÉMISSIVES DES SOLIDES |
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Page(s) | C6-51 - C6-60 | |
DOI | https://doi.org/10.1051/jphyscol:1973613 |
PROPRIÉTÉS PHOTOÉMISSIVES DES SOLIDES
J. Phys. Colloques 34 (1973) C6-51-C6-60
DOI: 10.1051/jphyscol:1973613
CONVENTIONAL AND NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS
A. H. SOMMERElectro-Optics Laboratory, RCA Electronic Components, David Sarnoff Research Center Princeton, New Jersey 08540, USA
Abstract
This talk will be divided into three parts. The first will be a brief survey of the "conventional" photocathodes with useful quantum yield in the visible and the near infrared spectral region. These cathodes include those represented by the chemical formulae Ag-O-Cs (S-1), Cs3Sb (S-11), Bi-Ag-O-Cs (S-10), Na2KSb, K2CsSb, and (Cs)Na2KSb (S-20). Second, the essential features of the negative electron affinity (NEA) concept will be discussed and the basic advantages of NEA materials for photoemission, as well as for secondary electron emission, will be summarized. In the third part, the present status of the practical use of NEA electron emitters will be presented. These include GaP, GaAs, Si, and the ternary III-V compounds. The technological problems encountered in working with these materials will be discussed. A few concluding remarks will deal with the prospects of future developments.