| Numéro |
J. Phys. Colloques
Volume 34, Numéro C6, Novembre 1973
CONGRÈS DU CENTENAIRE DE LA SOCIÉTÉ FRANÇAISE DE PHYSIQUEPROPRIÉTÉS PHOTOÉMISSIVES DES SOLIDES |
|
|---|---|---|
| Page(s) | C6-37 - C6-44 | |
| DOI | https://doi.org/10.1051/jphyscol:1973610 | |
PROPRIÉTÉS PHOTOÉMISSIVES DES SOLIDES
J. Phys. Colloques 34 (1973) C6-37-C6-44
DOI: 10.1051/jphyscol:1973610
PHOTOEMISSION OVERVIEWS OF VALENCE BAND DENSITIES-OF-STATES FOR Ge, GaAs, GaP, InSb, ZnSe AND CdTe USING SYNCHROTRON RADIATION
D. E. EASTMAN1, J. FREEOUF2 and M. ERBUDAK21 IBM T. J. Watson Research Center, Yorktown Heights, N. Y. 10598, USA
2 Division of Engineering and Applied Physics, Harvard University, Cambridge, Mass. 02138, USA
Abstract
We present photoemission overviews of major valence band features for the valence bands of several common group IV, III-V and II-VI semiconductors, which were obtained using synchrotron radiation in the 20-90 eV range from the 2.5 GeV storage ring at the Cambridge Electron Accelerator. Comparisons of our photoemission data with empirical pseudopotential method (EPM) calculations fit to optical data show systematic and significant differences which typically increase with increasing ionicity. InSb is described in some detail, including measurements of core level binding energies, spin-orbit splittings and Auger processes. Several precautions when interpreting valence band photoemission measurements in the 20 to 90 eV photon energy range are discussed (e. g. Auger processes, surface preparation, small matrix elements).