Supplément au Journal de Physique Colloques

ELECTRICAL BEHAVIOUR AND MODELLING OF A N-DOPED a-Si : H EMITTER BIPOLAR TRANSISTOR

O. BONNAUD, A. EL GHARIB and M. SAHNOUNE

J. Phys. Colloques, 49 C4 (1988) C4-383-C4-386

DOI: 10.1051/jphyscol:1988480

O. BONNAUD

A. EL GHARIB

M. SAHNOUNE

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