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Theoretical analysis of HEMT breakdown dependence on device design parameters

H.-F. Chau, D. Pavlidis and K. Tomizawa
IEEE Transactions on Electron Devices 38 (2) 213 (1991)
DOI: 10.1109/16.69897
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Off-state breakdown effects on gate leakage current in power pseudomorphic AlGaAs/InGaAs HEMTs

Y.C. Chou, G.P. Li, Y.C. Chen, et al.
IEEE Electron Device Letters 17 (10) 479 (1996)
DOI: 10.1109/55.537081
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Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs

C. Tedesco, E. Zanoni, C. Canali, et al.
IEEE Transactions on Electron Devices 40 (7) 1211 (1993)
DOI: 10.1109/16.216423
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