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Cited article:

AVALANCHE AND TUNNELING BREAKDOWN MECHANISMS IN HEMT'S POWER STRUCTURES

Y. CROSNIER, F. TEMCAMANI, D. LIPPENS, G. SALMER

J. Phys. Colloques, 49 C4 (1988) C4-563-C4-566

DOI: https://doi.org/10.1051/jphyscol:19884118

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This article has been cited by the following article(s):

Theoretical analysis of HEMT breakdown dependence on device design parameters

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IEEE Transactions on Electron Devices 38 (2) 213 (1991)
DOI: 10.1109/16.69897
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Off-state breakdown effects on gate leakage current in power pseudomorphic AlGaAs/InGaAs HEMTs

Y.C. Chou, G.P. Li, Y.C. Chen, et al.
IEEE Electron Device Letters 17 (10) 479 (1996)
DOI: 10.1109/55.537081
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Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs

C. Tedesco, E. Zanoni, C. Canali, et al.
IEEE Transactions on Electron Devices 40 (7) 1211 (1993)
DOI: 10.1109/16.216423
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