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Cited article:

THE INFLUENCE OF X-RAY DAMAGE ON ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS CAPACITORS

U. SCHWALKE, E.P. JACOBS, B. BREITHAUPT

J. Phys. Colloques, 49 C4 (1988) C4-299-C4-302

DOI: https://doi.org/10.1051/jphyscol:1988462

PDF (1.607 MB)

This article has been cited by the following article(s):

Direct observation of x-ray radiation-induced damage to SiO2/Si interface using multiwavelength room temperature photoluminescence

Jae Hyun Kim, Je Young Park, Chang Hwan Lee, et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 34 (4) (2016)
https://doi.org/10.1116/1.4949518

Strain relaxation and its effect on radiation-induced interface traps in thin rapid thermally grown high-temperature oxides

U. Schwalke, M. Kerber, C. Mazure and B. Breithaupt
Journal of Applied Physics 69 (2) 1113 (1991)
https://doi.org/10.1063/1.347382

M. Kerber and U. Schwalke
17 (1989)
https://doi.org/10.1109/RELPHY.1989.36311