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Cited article:

3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE

M. THURNER, S. SELBERHERR

J. Phys. Colloques, 49 C4 (1988) C4-245-C4-248

DOI: https://doi.org/10.1051/jphyscol:1988450

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This article has been cited by the following article(s):

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Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5

M. Thurner and S. Selberherr
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 9 (8) 856 (1990)
https://doi.org/10.1109/43.57786

Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation

M. Thurner, P. Lindorfer and S. Selberherr
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 9 (11) 1189 (1990)
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P. Ciampolini, A. Pierantoni, M. Melanotte, C. Cecchetti, C. Lombardi and G. Baccarani
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