ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT
J. Phys. Colloques, 49 C4 (1988) C4-223-C4-226
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Semiconductor Materials Analysis and Fabrication Process Control
C. Licoppe and C. DebaucheSemiconductor Materials Analysis and Fabrication Process Control 115 (1993)
https://doi.org/10.1016/B978-0-444-89908-8.50026-X
Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride
C. Licoppe and C. DebaucheApplied Surface Science 63 (1-4) 115 (1993)
https://doi.org/10.1016/0169-4332(93)90074-L
Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition
A Katz, A Feingold, S J Pearton, U K Chakrabarti and K M LeeSemiconductor Science and Technology 7 (4) 583 (1992)
https://doi.org/10.1088/0268-1242/7/4/025
Ultraviolet‐induced annealing of hydrogen bonds in silica films deposited at low temperatures
C. Debauche, C. Licoppe, J. Flicstein, O. Dulac and R. A. B. DevineApplied Physics Letters 61 (3) 306 (1992)
https://doi.org/10.1063/1.107920
Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devices
J. Tardy, J.L. Perrossier, F. Krafft, et al.Materials Science and Engineering: B 9 (1-3) 325 (1991)
https://doi.org/10.1016/0921-5107(91)90195-2
Evidence for a transitory composition pattern in the early stages of the photochemical deposition of silica films on semiconductors
C. Licoppe, C. Meriadec, J. Flicstein, Y. I. Nissim and A. C. PapadopouloApplied Physics Letters 59 (1) 43 (1991)
https://doi.org/10.1063/1.105572
A combination of rapid thermal processing and photochemical deposition for the growth of SiO2suitable for InP device applications
C. Licoppe, F. Wattine, C. Meriadec, J. Flicstein and Y. I. NissimJournal of Applied Physics 68 (11) 5636 (1990)
https://doi.org/10.1063/1.346976
Effects of background Fe concentrations in the annealing of ion‐implanted Si into InP substrates for InP metal‐insulator‐semiconductor field‐effect transistor applications
N. Duhamel, P. Krauz and Y. GaoJournal of Applied Physics 66 (4) 1855 (1989)
https://doi.org/10.1063/1.344359