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Cited article:

DEGRADATION OF THE POLY-Si/SILICIDE STRUCTURE IN ADVANCED MOS-TECHNOLOGIES

P. LIPPENS, K. MAEX, L. VAN den HOVE, R. DE KEERSMAECKER, V. PROBST, W. KOPPENOL, W. van der WEG

J. Phys. Colloques, 49 C4 (1988) C4-191-C4-194

DOI: https://doi.org/10.1051/jphyscol:1988439

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This article has been cited by the following article(s):

Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology

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https://doi.org/10.1016/j.sse.2024.108879

Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistance

V. Probst, H. Schaber, A. Mitwalsky, et al.
Journal of Applied Physics 70 (2) 693 (1991)
https://doi.org/10.1063/1.349625

Materials aspects of silicides for advanced technologies

Karen Maex
Applied Surface Science 53 328 (1991)
https://doi.org/10.1016/0169-4332(91)90282-O