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Cited article:

Odyssey of the charge pumping technique and its applications from micrometric- to atomic-scale era

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Journal of Applied Physics 134 (22) (2023)
https://doi.org/10.1063/5.0176246

A study of N-induced traps due to a nitrided gate in high-κ/metal gate nMOSFETs and their impact on electron mobility

M. Cassé, X. Garros, O. Weber, et al.
Solid-State Electronics 65-66 139 (2011)
https://doi.org/10.1016/j.sse.2011.06.015

Spectroscopic charge pumping in Si nanowire transistors with a high-κ/metal gate

M. Cassé, K. Tachi, S. Thiele and T. Ernst
Applied Physics Letters 96 (12) 123506 (2010)
https://doi.org/10.1063/1.3368122

Correlation of the leakage current and charge pumping in silicon on insulator gate-controlled diodes

K. Seghir, S. Cristoloveanu, R. Jerisian, J. Oualid and A.-J. Auberton-Herve
IEEE Transactions on Electron Devices 40 (6) 1104 (1993)
https://doi.org/10.1109/16.214736

Adaptation of the charge pumping technique to gated p-i-n diodes fabricated on silicon on insulator

T. Ouisse, S. Cristoloveanu, T. Elewa, et al.
IEEE Transactions on Electron Devices 38 (6) 1432 (1991)
https://doi.org/10.1109/16.81636

Low-frequency noise in depletion-mode SIMOX MOS transistors

T. Elewa, B. Boukriss, H.S. Haddara, A. Chovet and S. Cristoloveanu
IEEE Transactions on Electron Devices 38 (2) 323 (1991)
https://doi.org/10.1109/16.69913