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Cited article:

CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion

Yury Turkulets, Amir Silber, Alexander Ripp, Mark Sokolovsky and Ilan Shalish
Applied Physics Letters 108 (13) (2016)
https://doi.org/10.1063/1.4944778

Investigation of boron diffusion in polysilicon and its application to the design of p-n-p polysilicon emitter bipolar transistors with shallow emitter junctions

I.R.C. Post and P. Ashburn
IEEE Transactions on Electron Devices 38 (11) 2442 (1991)
https://doi.org/10.1109/16.97407

A 1- mu m polysilicon self-aligning bipolar process for low-power high-speed integrated circuits

H. Kabza, K. Ehinger, T.F. Meister, et al.
IEEE Electron Device Letters 10 (8) 344 (1989)
https://doi.org/10.1109/55.31751