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Cited article:

DIRECT OBSERVATION OF ATOMIC STEP STRUCTURE AT GaAS-AlAs HETEROINTERFACES IN TRANSMISSION ELECTRON MICROSCOPY AND IMPROVED LATTICE IMAGE TO DETECT THE INTERFACE BY MATERIAL-DEPENDENT PATTERNS

M. TANAKA, H. ICHINOSE, T. FURUTA, Y. ISHIDA, H. SAKAKI

J. Phys. Colloques, 48 C5 (1987) C5-101-C5-104

DOI: https://doi.org/10.1051/jphyscol:1987517

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This article has been cited by the following article(s):

Characterization of thin films, interfaces and surfaces by high-resolution electron microscopy

David J. Smith, Z.G. Li, Ping Lu, M.R. McCartney and S.-C.Y. Tsen
Ultramicroscopy 37 (1-4) 169 (1991)
https://doi.org/10.1016/0304-3991(91)90015-X

Phonons at non-planar (III-V) semiconductor heterojunctions: I. GaAs/AlAs(001)

D Kechrakos and J C Inkson
Semiconductor Science and Technology 5 (8) 818 (1990)
https://doi.org/10.1088/0268-1242/5/8/003