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Cited article:

Structure of the Na/Si(100)2×1 and Cs/Si(100)2×1 interfaces investigated by photoemission extended x-ray-absorption fine structure

S. T. Kim, P. Soukiassian, L. Barbier, S. Kapoor and Z. Hurych
Physical Review B 44 (11) 5622 (1991)
https://doi.org/10.1103/PhysRevB.44.5622

Unrelaxation of the semiconductor surface at low-coverage Ag/InP(110) interfaces as determined by photoemission extended x-ray-absorption fine structure

K. M. Choudhary, P. S. Mangat, D. Kilday and G. Margaritondo
Physical Review B 41 (11) 7576 (1990)
https://doi.org/10.1103/PhysRevB.41.7576

Low-coverage alkali-metal-induced surface structural changes in III-V semiconductors: Photoemission extended x-ray-absorption fine-structure study of the Na/InP(110) interface

K. M. Choudhary, P. S. Mangat, H. I. Starnberg, et al.
Physical Review B 39 (1) 759 (1989)
https://doi.org/10.1103/PhysRevB.39.759

Photoemission extended x-ray-absorption fine structure from clean and Al-covered InP(110) surfaces

K. M. Choudhary, P. S. Mangat, A. E. Miller, et al.
Physical Review B 38 (2) 1566 (1988)
https://doi.org/10.1103/PhysRevB.38.1566

Photoemission Exafs from InP(110) and Al/InP(110)

K. M. Choudhary, P. S. Mangat, D. Kilday and G. Margaritondo
MRS Proceedings 143 (1988)
https://doi.org/10.1557/PROC-143-79