| Numéro |
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
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|---|---|---|
| Page(s) | C8-203 - C8-207 | |
| DOI | https://doi.org/10.1051/jphyscol:1986838 | |
J. Phys. Colloques 47 (1986) C8-203-C8-207
DOI: 10.1051/jphyscol:1986838
PHOTOEMISSION EXAFS MEASUREMENTS OF Al-0 BOND LENGTHS IN Al FILMS
K.M. CHOUDHARY1, S.T. KIM1, J.H. LEE1, S.N. SHAH1, M.L. DEN BOER2, G.P. WILLIAMS3 et G.M. ROTHBERG11 Department of Materials and Metallurgical Engineering, Stevens Institute of Technology, Hoboken, NJ 07030, U.S.A.
2 Department of Physics, Hunter College of CUNY, New York, NY 10021, U.S.A.
3 NSLS, Brookhaven National Laboratory, Upton, NY 11973, U.S.A.
Abstract
Photoemission EXAFS (PEXAFS) results have been obtained on the surface structures of evaporated, polycrystalline aluminum films exposed to approximately 25L of oxygen at room temperature. By measuring only PEXAFS associated with the unshifted A1 2p photopeak we studied the environment specifically of these atoms and not of those chemically shifted. The Al-0 distance is found to be 1.76±0.04 Å. The Al- Al spacing is 3.00±0.05 Å, somewhat larger than the 2.86 Å of bulk aluminum. Results using the bulk and surface plasmon loss peaks obtained on another low exposure film agree with these values. A film of Al+1000L oxygen gave the same Al-0 value when the unshifted 2p peak was used and a value 0.04±0.01 Å larger when the peak chemically shifted by 2.7 eV was used. The plasmon and 1000L results will be described elsewhere.