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Cited article:

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties

Landolt-Börnstein - Group III Condensed Matter, Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties b 1 (2002)
https://doi.org/10.1007/10832182_178

Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties

Landolt-Börnstein - Group III Condensed Matter, Group IV Elements, IV-IV and III-V Compounds. Part b - Electronic, Transport, Optical and Other Properties b 1 (2002)
https://doi.org/10.1007/10832182_186

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties

Landolt-Börnstein - Group III Condensed Matter, Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties a 1 (2001)
https://doi.org/10.1007/10551045_102

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties

Landolt-Börnstein - Group III Condensed Matter, Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties a 1 (2001)
https://doi.org/10.1007/10551045_104

Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties

Landolt-Börnstein - Group III Condensed Matter, Group IV Elements, IV-IV and III-V Compounds. Part a - Lattice Properties a 1 (2001)
https://doi.org/10.1007/10551045_111

Coefficients of a dispersion equation for the pressure-optic coefficients in Ge and GaAs

Gorachand Ghosh and Hiroyoshi Yajima
Physical Review B 59 (19) 12208 (1999)
https://doi.org/10.1103/PhysRevB.59.12208

Physical criteria for the direct-to-indirect gap crossover in AlxGa1−xAs alloys

R. B. Capaz, J. P. von der Weid and Belita Koiller
Applied Physics Letters 60 (6) 704 (1992)
https://doi.org/10.1063/1.106543

Photoconductivity and photoluminescence of GaAs grown on Si by molecular beam epitaxy

G. Bernier, J. Beerens, J. De Boeck, et al.
Solid State Communications 69 (7) 727 (1989)
https://doi.org/10.1016/0038-1098(89)90819-3

Photoluminescence of GaAs/Si under hydrostatic pressure

J Beerens, G Bernier, S Jandl, J De Boeck and K Deneffe
Semiconductor Science and Technology 4 (12) 1156 (1989)
https://doi.org/10.1088/0268-1242/4/12/018

Pressure dependence of direct and indirect optical absorption in GaAs

A. R. Goni, K. Strössner, K. Syassen and M. Cardona
Physical Review B 36 (3) 1581 (1987)
https://doi.org/10.1103/PhysRevB.36.1581

Erratum: Theoretical investigation of the pressure dependences of energy gaps in semiconductors [Phys. Rev. B 32, 1152 (1985)]

Seongbok Lee, J. Sanchez-Dehesa and John D. Dow
Physical Review B 33 (10) 7309 (1986)
https://doi.org/10.1103/PhysRevB.33.7309

Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices

J.-Y. Marzin, M. N. Charasse and B. Sermage
Physical Review B 31 (12) 8298 (1985)
https://doi.org/10.1103/PhysRevB.31.8298