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Cited article:
G. Contreras , A. Compaan , A. Axmann
J. Phys. Colloques, 44 C5 (1983) C5-193-C5-195
This article has been cited by the following article(s):
6 articles
Nanoscale n++-p junction formation in GeOI probed by tip-enhanced Raman spectroscopy and conductive atomic force microscopy
Slawomir Prucnal, Yonder Berencén, Mao Wang, et al. Journal of Applied Physics 125 (24) (2019) https://doi.org/10.1063/1.5080289
High level active n+ doping of strained germanium through co-implantation and nanosecond pulsed laser melting
David Pastor, Hemi H. Gandhi, Corentin P. Monmeyran, et al. Journal of Applied Physics 123 (16) (2018) https://doi.org/10.1063/1.5012512
In situ ohmic contact formation for n-type Ge via non-equilibrium processing
S Prucnal, J Frigerio, E Napolitani, et al. Semiconductor Science and Technology 32 (11) 115006 (2017) https://doi.org/10.1088/1361-6641/aa8b2f
Resonance Raman scattering of Si local vibrational modes in GaAs
M. Ramsteiner, J. Wagner, H. Ennen and M. Maier Physical Review B 38 (15) 10669 (1988) https://doi.org/10.1103/PhysRevB.38.10669
Optical properties of pure and ultraheavily doped germanium: Theory and experiment
L. Via and M. Cardona Physical Review B 34 (4) 2586 (1986) https://doi.org/10.1103/PhysRevB.34.2586
Resonance Raman scattering in heavily-bulk-doped and ion-implanted laser-annealed n-type germanium
A. Sood, G. Contreras and M. Cardona Physical Review B 31 (6) 3760 (1985) https://doi.org/10.1103/PhysRevB.31.3760