Articles citing this article

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Cited article:

A new technique to decompose closely spaced interface and bulk trap states using temperature dependent pulse-width deep level transient spectroscopy method: An application to PT/CdS photodetector

C. W. Wang, C. H. Wu and J. L. Boone
Journal of Applied Physics 73 (2) 760 (1993)
https://doi.org/10.1063/1.353334

Inhomogeneities in plastically deformed silicon single crystals. II. Deep-level transient spectroscopy investigations ofp- andn-doped silicon

C. Kisielowski and E. R. Weber
Physical Review B 44 (4) 1600 (1991)
https://doi.org/10.1103/PhysRevB.44.1600

Evidence for the electron traps at dislocations in GaAs crystals

Tadeusz Wosiński
Journal of Applied Physics 65 (4) 1566 (1989)
https://doi.org/10.1063/1.342974

Defect states inp‐type silicon crystals induced by plastic deformation

Haruhiko Ono and Koji Sumino
Journal of Applied Physics 57 (2) 287 (1985)
https://doi.org/10.1063/1.334802

Electrical properties of dislocations and point defects in plastically deformed silicon

P. Omling, E. R. Weber, L. Montelius, H. Alexander and J. Michel
Physical Review B 32 (10) 6571 (1985)
https://doi.org/10.1103/PhysRevB.32.6571