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Cited article:

High breakdown voltage of AlGaAs/GaAs/AlGaAs diode achieved by balanced charges considering residual carbon impurity in hole and electron channels

Hiroaki Ogawa, Soichiro Kawata and Naotaka Iwata
Japanese Journal of Applied Physics 60 (4) 041001 (2021)
https://doi.org/10.35848/1347-4065/abf0b7

Technology transfer for high frequency devices for consumer electronics

S. Watanabe
IEEE Transactions on Microwave Theory and Techniques 40 (12) 2461 (1992)
https://doi.org/10.1109/22.179917