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Cited article:
P. Ruterana , A. Bary , G. Nouet
J. Phys. Colloques, 43 C1 (1982) C1-27-C1-31
This article has been cited by the following article(s):
6 articles
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A particular case of electronic behaviour of the Sigma =3 grain boundary in p-type Si
D S Kyriakos, A N Anagnostopoulos, Ph Komninou and B Ploss Semiconductor Science and Technology 6 (7) 607 (1991) https://doi.org/10.1088/0268-1242/6/7/007
Electrical activity of the first‐ and second‐order twins and grain boundaries in silicon
A. Bary and G. Nouet Journal of Applied Physics 63 (2) 435 (1988) https://doi.org/10.1063/1.340259
Origine structurale et chimique de l'activité électrique des joints de grains dans le silicium
A. Rocher Revue de Physique Appliquée 22 (7) 591 (1987) https://doi.org/10.1051/rphysap:01987002207059100
Grain‐boundary space‐charge conduction
Herbert F. Mataré Journal of Applied Physics 59 (1) 97 (1986) https://doi.org/10.1063/1.336846
Grain boundaries in semiconductors
C R M Grovenor Journal of Physics C: Solid State Physics 18 (21) 4079 (1985) https://doi.org/10.1088/0022-3719/18/21/008