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Cited article:

A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN

V. Zozulia, O. Botsula and K. Prykhodko
Radio physics and radio astronomy 29 (4) 317 (2024)
https://doi.org/10.15407/rpra29.04.317

The impact of doping on the efficiency of GaAs –diode with active graded GaInAs side border

V. O. Zozulia, O. V. Botsula and K. H. Prykhodko
Visnyk of V.N. Karazin Kharkiv National University, series “Radio Physics and Electronics” (39) 27 (2023)
https://doi.org/10.26565/2311-0872-2023-39-03

A model hyperfrequency differential-mobility for nonlinear transport in semiconductors

L. Varani, J. C. Vaissiere, J. P. Nougier, et al.
Journal of Applied Physics 77 (2) 665 (1995)
https://doi.org/10.1063/1.359053

Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductors

V Gruzhinskis, E Starikov, P Shiktorov, et al.
Semiconductor Science and Technology 8 (7) 1283 (1993)
https://doi.org/10.1088/0268-1242/8/7/016

Theoretical contribution to the design of millimeter-wave TEO's

M.-R. Friscourt, P.-A. Rolland, A. Cappy, E. Constant and G. Salmer
IEEE Transactions on Electron Devices 30 (3) 223 (1983)
https://doi.org/10.1109/T-ED.1983.21104