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Cited article:

A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN

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Radio physics and radio astronomy 29 (4) 317 (2024)
https://doi.org/10.15407/rpra29.04.317

A model hyperfrequency differential-mobility for nonlinear transport in semiconductors

L. Varani, J. C. Vaissiere, J. P. Nougier, et al.
Journal of Applied Physics 77 (2) 665 (1995)
https://doi.org/10.1063/1.359053

Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductors

V Gruzhinskis, E Starikov, P Shiktorov, et al.
Semiconductor Science and Technology 8 (7) 1283 (1993)
https://doi.org/10.1088/0268-1242/8/7/016

Theoretical contribution to the design of millimeter-wave TEO's

M.-R. Friscourt, P.-A. Rolland, A. Cappy, E. Constant and G. Salmer
IEEE Transactions on Electron Devices 30 (3) 223 (1983)
https://doi.org/10.1109/T-ED.1983.21104