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Cited article:

SOME NEW DEVELOPMENTS IN THE FIELD OF AMORPHOUS SILICON SOLAR CELLS

W.E. Spear, R.A. Gibson, D. Yang, P.G. Lecomber, G. Müller, S. Kalbitzer

J. Phys. Colloques, 42 C4 (1981) C4-1143-C4-1153

DOI: https://doi.org/10.1051/jphyscol:19814245

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This article has been cited by the following article(s):

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physicochemical Characterization

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https://doi.org/10.1016/S0080-8784(08)62676-9

Measurements of depletion layers in hydrogenated amorphous silicon

R. Street
Physical Review B 27 (8) 4924 (1983)
https://doi.org/10.1103/PhysRevB.27.4924

Carrier lifetimes in amorphous silicon junctions from delayed and interrupted field experiments

W. E. Spear, H. L. Steemers and H. Mannsperger
Philosophical Magazine Part B 48 (5) L49 (1983)
https://doi.org/10.1080/13642818308228575