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Cited article:

Optical and electrical properties of the disordered composite semiconductor (GaAs)1−x (SiC2 : H)x, grown by metal-organic chemical vapour deposition

F. Maury, G. Constant, D. Jousse and A. Deneuville
Philosophical Magazine B 53 (5) 445 (1986)
https://doi.org/10.1080/13642818608240658