Articles citing this article

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Cited article:

In situ ellipsometry comparison of the nucleation and growth of sputtered and glow-discharge a-Si:H

R. W. Collins and J. M. Cavese
Journal of Applied Physics 62 (10) 4146 (1987)
https://doi.org/10.1063/1.339132

Novel Properties of a-SI:H Prepared by Dual Ion Beam Sputtering

H. Windischmann, R. W. Collins and J. M. Cavese
MRS Proceedings 70 (1986)
https://doi.org/10.1557/PROC-70-17

Photoacoustic and xerographic investigation of the gap-state structure ofa−Se: Comparison witha−Si:H

G. P. Ceasar, M. Abkowitz and J. W-P. Lin
Physical Review B 29 (4) 2353 (1984)
https://doi.org/10.1103/PhysRevB.29.2353

Hydrogenated Amorphous Silicon - Electronic and Transport Properties

P.C. Taylor
Semiconductors and Semimetals, Hydrogenated Amorphous Silicon - Electronic and Transport Properties 21 99 (1984)
https://doi.org/10.1016/S0080-8784(08)63067-7