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Cited article:
G. WEYER , G. GREBE , A. KETTSCHAU , B. I. DEUTCH , A. NYLANDSTED LARSEN , O. HOLCK
J. Phys. Colloques, 37 C6 (1976) C6-893-C6-896
This article has been cited by the following article(s):
4 articles
Structural composition dependence of amorphous silicon-iron prepared by ion implantation and by coevaporation: A Mössbauer study
F. H. Sánchez, M. B. Fernández van Raap and J. Desimoni Physical Review B 44 (9) 4290 (1991) https://doi.org/10.1103/PhysRevB.44.4290
Implantation induced diamond to amorphous-carbon transition studied by conversion electron Mössbauer spectroscopy
J.A. Sawicki and B.D. Sawicka Nuclear Instruments and Methods in Physics Research 194 (1-3) 465 (1982) https://doi.org/10.1016/0029-554X(82)90566-3
Mössbauer Spectroscopy II
R. D. Sawicka and J. A. Sawicki Topics in Current Physics, Mössbauer Spectroscopy II 25 139 (1981) https://doi.org/10.1007/978-3-662-08867-8_7
Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy of ^{119}Sn defect structures from implantations of radioactive tellurium
A. Larsen, G. Weyer and L. Nanver Physical Review B 21 (11) 4951 (1980) https://doi.org/10.1103/PhysRevB.21.4951