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Cited article:

High spatial resolution extended x‐ray emission fine structure (EXEFS) spectra of an electronic device measured by electron probe microanalysis (EPMA)

Jun Kawai and Hideyuki Takahashi
Surface and Interface Analysis 31 (2) 114 (2001)
https://doi.org/10.1002/sia.965

The forbidden Auger transition, KL2,3L2,3(3P), observed in the radiative Auger spectra of silicon, phosphorus and sulfur

Isaac Abrahams, David S Urch, Bruno Vrebos and Margaret West
Journal of Physics B: Atomic, Molecular and Optical Physics 32 (20) L579 (1999)
https://doi.org/10.1088/0953-4075/32/20/102

Si X-ray absorption near edge structure (XANES) of Si, SiC, SiO2, and Si3N4 measured by an electron probe X-ray microanalyzer (EPMA)

Jun Kawai and Hideyuki Takahashi
Spectrochimica Acta Part B: Atomic Spectroscopy 54 (1) 231 (1999)
https://doi.org/10.1016/S0584-8547(98)00153-0

Si X-Ray Absorption Near Edge Structure (XANES) in X-Ray Fluorescence Spectra.

Jun Kawai, Kouichi Hayashi, Kazuaki Okuda and Atsushi Nisawa
Chemistry Letters (3) 245 (1998)
https://doi.org/10.1246/cl.1998.245

Improvement of Total Reflection X-ray Fluorescence (TXRF) spectrochemical analysis for silicon wafers

Manabu Funabashi, Tadashi Utaka and Tomoya Arai
Spectrochimica Acta Part B: Atomic Spectroscopy 52 (7) 887 (1997)
https://doi.org/10.1016/S0584-8547(96)01662-X