| Issue |
J. Phys. Colloques
Volume 50, Number C8, Novembre 1989
36th International Field Emission Symposium
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|---|---|---|
| Page(s) | C8-37 - C8-40 | |
| DOI | https://doi.org/10.1051/jphyscol:1989807 | |
J. Phys. Colloques 50 (1989) C8-37-C8-40
DOI: 10.1051/jphyscol:1989807
COMMENT ON "FIELD PENETRATION AND BAND BENDING NEAR SEMICONDUCTOR SURFACES IN HIGH ELECTRIC FIELD" BY T.T. TSONG
M. TOMITA1 et T. KURODA21 Shindengen Electric Mfg. Ltd, 10-13 Minami, Hannno, Saitama 357, Japan
2 The institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan
Abstract
It is well known that the surface of specimen in field ion microscope is applied high electric field and that field penetration and band bending must be considered for proper interpretation of atom probe data of semiconductors as investigated by some researchers. Above all, because of surface temperature rise by laser irradiation, it is necessary to gain knowledge about the relation between field penetration and temperature of semiconductor surface. The problem has already been tried to be solved and the results of numerical calculation under various conditions were reported many years ago. However, in the paper, besides the wrong result with regard to field penetration, significant errors seem to exist in the procedures of numerical calculations. This can be easily confirmed by comparison with analytical solutions in case of intrinsic semiconductor under the conditions similar to that in the paper.