Issue
J. Phys. Colloques
Volume 49, Number C8, Décembre 1988
Proceedings of the International Conference on Magnetism
Page(s) C8-1179 - C8-1184
DOI https://doi.org/10.1051/jphyscol:19888540
Proceedings of the International Conference on Magnetism

J. Phys. Colloques 49 (1988) C8-1179-C8-1184

DOI: 10.1051/jphyscol:19888540

MAGNETIC PROPERTIES OF DISORDERED SYSTEMS NEAR A METAL-INSULATOR TRANSITION

R. N. Bhatt1, M. A. Paalanen1 et S. Sachdev2

1  AT & T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
2  Center for Theoretical Physics, Yale University, New Haven, CT 06511, U.S.A.


Abstract
Using doped semiconductors as a paradigm, the low-temperature magnetic and thermodynamic behaviour of a disordered system undergoing a metal-insulator transition is described, and compared with various theoretical approaches from the metallic and insulating phases. Issues addressed include universal behaviour in the insulating phase, local moments in the metallic phase, and effects of compensation.