Issue
J. Phys. Colloques
Volume 49, Number C5, Octobre 1988
Interface Science and Engineering '87
An International Conference on the Structure and Properties of Internal Interfaces
Page(s) C5-605 - C5-610
DOI https://doi.org/10.1051/jphyscol:1988576
Interface Science and Engineering '87
An International Conference on the Structure and Properties of Internal Interfaces

J. Phys. Colloques 49 (1988) C5-605-C5-610

DOI: 10.1051/jphyscol:1988576

STRAIN-INDUCED BOUNDARY MIGRATION (SIBM) IN ALUMINUM BICRYSTALS EACH WITH A <211> TILT BOUNDARY

F. INOKO1 et M. KOBAYASHI2

1  Department of Production Mechanics, Technical College of Tokushima University, Minamijosanjima, Tokushima 770, Japan
2  Department of Precision Mechanics, Graduate Student, Tokushima University, Minamijosanjima, Tokushima 770, Japan


Abstract
In order to clarify the effect of edge dislocations on the occurrence of the strain-induced boundary migration (SIBM), aluminum bicrystals each with a <211> tilt grain boundary were prepared. The bicrystals were tensile-deformed to 0.3 and annealed under certain conditions. Consequently, in the grain boundary recrystallization in the bicrystals with the primary edge dislocations in the component crystal(s) parallel to the <211> tilt boundaries of large tilt angles, the SIBM mechanism played an important role. It could be considered that the phenomena of the SIBM are strongly related to the motion and annihilation of edge dislocations or their array, and the migration of the tilt boundaries with large tilt angles.