Issue
J. Phys. Colloques
Volume 49, Number C5, Octobre 1988
Interface Science and Engineering '87
An International Conference on the Structure and Properties of Internal Interfaces
Page(s) C5-457 - C5-462
DOI https://doi.org/10.1051/jphyscol:1988556
Interface Science and Engineering '87
An International Conference on the Structure and Properties of Internal Interfaces

J. Phys. Colloques 49 (1988) C5-457-C5-462

DOI: 10.1051/jphyscol:1988556

BISMUTH SEGREGATION IN Cu-Bi BICRYSTALS

M. MENYHARD1, 2, B. BLUM1, C.J. McMAHON1, Jr.1, S. CHIKWAMBANI3 et J . WEERTMAN3

1  Dept. of Material Science and Engineering, University of Pennsylvania, 3231 Walnut St., Philadelphia, PA 19104, U.S.A.
2  Research Institute for Technical Physics of the Hungarian Academy of Sciences, Hungary
3  Dept. of Material Science and Engineering, Northwestern University, Evanston, IL 60201, U.S.A.


Abstract
The grain boundaries of randomly oriented Cu- Bi bicrystals containing about 300 wt ppm Bi were studied with a high-resolution scanning Auger microprobe. The non-planar interfaces, strongly facetted in many areas due to the Bi segregation, revealed a rather uniform Bi coverage despite a great variation in grain boundary structure. Particles concluded to be Bi were found on large areas of the intergranular fracture surfaces, apparently coexisting with the segregated layer of atomic bismuth. The Bi particles could be dissolved by heating the specimens to temperatures as low as 650°C and quenching.