Issue
J. Phys. Colloques
Volume 48, Number C7, Décembre 1987
1st International Laser M2P Conference
Page(s) C7-588 - C7-588
DOI https://doi.org/10.1051/jphyscol:19877142
1st International Laser M2P Conference

J. Phys. Colloques 48 (1987) C7-588-C7-588

DOI: 10.1051/jphyscol:19877142

PHOTON GATED HOLE BURNING IN THE 7F0 ? 5D2 ABSORPTION OF BaCIF : Sm2+

J.C. VIAL1 and R. M. MACFARLANE2

1  Laboratoire de Spectrométrie Physique (CNRS UA-08 et Celphyra), Université Scientifique et Médicale de Grenoble, BP 87, F-38402 Saint-Martin-d'Hères Cedex, France
2  IBM Almaden Research Center, 650, Harry Road, San Jose, CA 95120-6099, U.S.A.


Abstract
Spectral hole burning in solids is a selective bleaching of a small portion of an inhomogeneously broadened optical transition by a laser. In the photon gated holeburning process spectral holes are burned in two steps. The first is provided by a narrow band laser resonant with the inhomogeneously broadened transition and the second (gating) can be initiated by a broad band light source. Photon gated spectral hole burning was reported recently in 7F05D0 and 7F05D1 absorption lines of Sm2+ in BaClF(1). In this poster we report on the spectral holeburning behaviour of 1F05D2 transition. We found that even in absence of additional light source for gating, permanent holes can be burned. This self gating behaviour is consistent with the observation that the optimum frequency following 5D0 excitation is ≈ 22 000cm-1 so that two photons of energy 5D2 - 7F0 are sufficient to produce photoionisation. We have analysed the light intensity dependance of hole area and a simple model indicate that the electron transfer following the photoionisation is strongly dependant on the ion - electron trap distance.