| Issue |
J. Phys. Colloques
Volume 48, Number C7, Décembre 1987
1st International Laser M2P Conference
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|
|---|---|---|
| Page(s) | C7-537 - C7-539 | |
| DOI | https://doi.org/10.1051/jphyscol:19877128 | |
1st International Laser M2P Conference
J. Phys. Colloques 48 (1987) C7-537-C7-539
DOI: 10.1051/jphyscol:19877128
1 Laboratoire de Spectrométrie Physique, BP 87 et Celphyra, CNRS-UA 09, F-38402 Saint-Martin-d'Hères Cedex, France
2 CNET/LAB/ICM, BP 40, F-22301 Lannion Cedex, France
J. Phys. Colloques 48 (1987) C7-537-C7-539
DOI: 10.1051/jphyscol:19877128
INTRINSIC VERSUS EXTRINSIC EFFECTS IN EXCITATION DYNAMICS IN GaAs/GaAlAs SUPERLATTICES
D. BLOCK1, B. BOULANGER1, R. ROMESTAIN1, B. DEVEAUD2, B. LAMBERT2 and A. REGRENY21 Laboratoire de Spectrométrie Physique, BP 87 et Celphyra, CNRS-UA 09, F-38402 Saint-Martin-d'Hères Cedex, France
2 CNET/LAB/ICM, BP 40, F-22301 Lannion Cedex, France
Abstract
We report studies of photoexcited carrier dynamics in GaAlAs/GaAs superlattices as a function of excitation power using optical technique. At low power, we observe a quadratic behavior of luminescence intensity, due to competition between electron-hole radiative recombination and trapping by defects. At higher power, a departure from this behavior is interpreted by a fast spatial expansion of the plasma. However, over the whole range, the measured decay time is mainly related to the trapping process.