| Issue |
J. Phys. Colloques
Volume 48, Number C6, Novembre 1987
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
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|---|---|---|
| Page(s) | C6-203 - C6-208 | |
| DOI | https://doi.org/10.1051/jphyscol:1987633 | |
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
J. Phys. Colloques 48 (1987) C6-203-C6-208
DOI: 10.1051/jphyscol:1987633
Department of Experimental Physics, Bashkir State University, 450074 Ufa, U.S.S.R.
J. Phys. Colloques 48 (1987) C6-203-C6-208
DOI: 10.1051/jphyscol:1987633
RECENT RESULTS OF MODELING OF STATISTIC CHARACTERISTICS OF SEMICONDUCTOR FIELD EMITTERS
R.Z. Bakhtizin, S.S. Ghots et I.M. Chernin-YakhnukDepartment of Experimental Physics, Bashkir State University, 450074 Ufa, U.S.S.R.
Abstract
The paper considers a model describing experimental results of the study of field emission current low-frequency fluctuations. The model is based upon the assumption of a direct correlation between low-frequency fluctuations with a spectrum 1/f[MATH] and electron processes on the emitter surface. We show a one-to-one correlation between the number of emission centres (a feature characteristic for a nonuniform surface) and the low-frequency noise power. The results obtained by means of the model to be presented below have been compared with the Hooge empirical formula. It is shown that the latter provides a satisfactory description of experimental results for frequencies approximating 1 Hz.