| Issue |
J. Phys. Colloques
Volume 48, Number C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-557 - C5-560 | |
| DOI | https://doi.org/10.1051/jphyscol:19875120 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-557-C5-560
DOI: 10.1051/jphyscol:19875120
Departamento de Fisica de la Materia Condensada, Universidad Autonoma, Cantoblanco, E-Madrid 28049, Spain
J. Phys. Colloques 48 (1987) C5-557-C5-560
DOI: 10.1051/jphyscol:19875120
ELECTRONIC STRUCTURE OF Si-Ge STRAINED SUPERLATTICES
C. TEJEDOR et L. BREYDepartamento de Fisica de la Materia Condensada, Universidad Autonoma, Cantoblanco, E-Madrid 28049, Spain
Abstract
We present a calculation of both electronic energy levels and intensities of optical transitions in (Si)n-(Ge)n strained superlattices. Strain effects are analyzed by considering cases where either Si or Ge is the substrate determining the lattice parameter. The results are in qualitative agreement with the available experimental information.