| Issue |
J. Phys. Colloques
Volume 47, Number C8, Décembre 1986
EXAFS and Near Edge Structure IV
|
|
|---|---|---|
| Page(s) | C8-983 - C8-986 | |
| DOI | https://doi.org/10.1051/jphyscol:19868189 | |
EXAFS and Near Edge Structure IV
J. Phys. Colloques 47 (1986) C8-983-C8-986
DOI: 10.1051/jphyscol:19868189
1 Department of Physics, Indian Institute of Technology, Bombay 400 076, India
2 Tata Institute of Fundamental Research, Bombay 400 005, India
J. Phys. Colloques 47 (1986) C8-983-C8-986
DOI: 10.1051/jphyscol:19868189
SUBSTITUTION EFFECTS ON THE MIXED VALENCE BEHAVIOUR OF Eu in EuCu2Si2
SUJATA PATIL1, B.D. PADALIA1, R. NAGARAJAN2, L.C. GUPTA2 et R. VIJAYARAGHAVAN21 Department of Physics, Indian Institute of Technology, Bombay 400 076, India
2 Tata Institute of Fundamental Research, Bombay 400 005, India
Abstract
Results of the L3 XANES and 151Eu Mossbauer measurements on EuCu2(Si1-xSnx)2, Eu(Cu1-xAux)2Si2 with 0≤x≤0.2 and Eu (Cu0.8M0.2)Si2 where M=Au, Ag, Ru and Ni, are reported here.