| Issue |
J. Phys. Colloques
Volume 45, Number C9, Décembre 1984
31st International Field Emission Symposium / 31ème Symposium International d'Emission de Champ
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|---|---|---|
| Page(s) | C9-471 - C9-476 | |
| DOI | https://doi.org/10.1051/jphyscol:1984978 | |
31st International Field Emission Symposium / 31ème Symposium International d'Emission de Champ
J. Phys. Colloques 45 (1984) C9-471-C9-476
DOI: 10.1051/jphyscol:1984978
Department of Materials Science and Engineering, The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
J. Phys. Colloques 45 (1984) C9-471-C9-476
DOI: 10.1051/jphyscol:1984978
FIM AND ATOM-PROBE STUDIES OF Ni-GaAs INTERFACE
M. Wada, H. Kita et O. NishikawaDepartment of Materials Science and Engineering, The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
Résumé
Une fine couche de Ni a été déposée sur un substrat d'AsGa et la formation d'un interface Ni/GaAs a été examinée en microscopie ionique de champ et par sonde à atomes.
Abstract
A thin layer of Ni was deposited on a GaAs substrate and the formation of Ni/GaAs interface layer was examined by fhe field ion microscope and the atom-probe.