| Issue |
J. Phys. Colloques
Volume 42, Number C7, Octobre 1981
Third International Conference on Hot Carriers in Semiconductors
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|---|---|---|
| Page(s) | C7-387 - C7-392 | |
| DOI | https://doi.org/10.1051/jphyscol:1981747 | |
Third International Conference on Hot Carriers in Semiconductors
J. Phys. Colloques 42 (1981) C7-387-C7-392
DOI: 10.1051/jphyscol:1981747
Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, 2000 Hamburg 36, FRG
J. Phys. Colloques 42 (1981) C7-387-C7-392
DOI: 10.1051/jphyscol:1981747
HOT CARRIER POPULATION INVERSION IN p-Ge
S. Komiyama et R. SpiesInstitut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, 2000 Hamburg 36, FRG
Abstract
Hall effect measurements are performed at 4.2 K on hot carriers in p-Ge (p = 1.5 x 1014/cm3). The data of the Hall mobility, the Hall angle, and the magnitude of current are compared with calculation to afford definite evidence for streaming motion and population inversion of light and heavy holes. The ratio of population inversion is estimated from an analysis of the results.