Issue |
J. Phys. Colloques
Volume 42, Number C5, Octobre 1981
ICIFUAS-7Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids |
|
---|---|---|
Page(s) | C5-729 - C5-733 | |
DOI | https://doi.org/10.1051/jphyscol:19815112 |
ICIFUAS-7
Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids
J. Phys. Colloques 42 (1981) C5-729-C5-733
DOI: 10.1051/jphyscol:19815112
1 Institut für Festkörperforschung, Kernforschungsanlage Jülich, D-5170 Jülich, F.R.G.
2 Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439, U.S.A.
Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids
J. Phys. Colloques 42 (1981) C5-729-C5-733
DOI: 10.1051/jphyscol:19815112
TRAPPING OF SELF-INTERSTITIALS AT OVERSIZED IMPURITIES IN Al-Mg AND Cu-In AND UNDERSIZED IMPURITIES IN Al-Fe
G. Kollers1, H. Jacques1, L.E. Rehn2 et K.-H. Robrock11 Institut für Festkörperforschung, Kernforschungsanlage Jülich, D-5170 Jülich, F.R.G.
2 Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439, U.S.A.
Abstract
Several IF-peaks have been observed in Al-0.04at% Fe, Al-0.01at% Mg and Cu-0.025at% In after electron irradiations. These peaks can all be related to reorientation processes of point-defect complexes consisting of self-interstitial and impurity atoms. The activation energies and preexponential factors are found in a range which is characteristic for interstitial-atom jumps. The peak behaviour during thermal annealing treatments reveal the trapping-strength of impurity atoms for migrating self-interstitial-atoms.