| Issue |
J. Phys. Colloques
Volume 42, Number C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-357 - C4-360 | |
| DOI | https://doi.org/10.1051/jphyscol:1981476 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-357-C4-360
DOI: 10.1051/jphyscol:1981476
School of Science, Kwansei Gakuin University, 1-1-155 Uegahara, Nishinomiya, 662 Japan
J. Phys. Colloques 42 (1981) C4-357-C4-360
DOI: 10.1051/jphyscol:1981476
ORDER PARAMETER IN THE GLASS TRANSITION OF VITREOUS S-Ge
H. Kawamura, K. Hattori, K. Matsunaga, Y. Akagi and A. KawamoriSchool of Science, Kwansei Gakuin University, 1-1-155 Uegahara, Nishinomiya, 662 Japan
Abstract
Raman spectra of sulfur-rich S-Ge glasses prepared under different conditions were measured. It was found that a side peak at 440 cm-1 is stronger for the slowly quenched glass than for the rapidly quenched one. This peak also becomes smaller with the rise of temperature. The intensity of this peak is discussed in relation to the medium-range order of the glassy state.